Method for producing high carrier concentration p-Type transparent conducting oxides
US7517784B2 · kind B2 · utility
5Cited by
21References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2002 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Dec 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.