Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs

US7518165B2 · kind B2 · utility

Assignee

• Teledyne Licensing, LLC · US

Inventors

• Joshua I. Bergman · Thousand Oaks, US
• Berinder Brar · Newbury Park, US
• Amal Ikhlassi · Thousand Oaks, US
• Gabor Nagy · Redmond, US
• Gerard J. Sullivan · Newbury Park, US

Key dates

• Filing date: Sep 14, 2006
• Grant date: Apr 14, 2009
• Expiry date: Sep 14, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02549
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metamorphic high electron mobility transistor having a plurality of high electron mobility transistor layers, a semi-insulating substrate, a ternary metamorphic buffer layer positioned between the semi-insulating substrate and the plurality of high electron mobility transistor layers, the ternary metamorphic buffer layer being Al1-xGaxSb such that x is greater than or equal to 0.2 but less than 0.3, a stabilizing layer positioned between the ternary metamorphic buffer layer and the plurality of high electron mobility transistor layers, the stabilizing layer being Al1-yGaySb such that y is greater than 0.2 but less than or equal to 0.3 and y is greater than x, and a nucleation layer interposed between the semi-insulating substrate and the ternary metamorphic buffer layer.