Semiconductor structure, particularly in a semiconductor detector, and associated operating method

US7518203B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Gerhard Lutz · Munich, DE
• Rainer Richter · Munich, DE
• Lothar Strueder · Munich, DE

Key dates

• Filing date: Jun 4, 2007
• Grant date: Apr 14, 2009
• Expiry date: Nov 22, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/802

Abstract

Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.