Nonvolatile variable resistance memory device and method of fabricating the same
US7518213B2 · kind B2 · utility
3Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | May 18, 2007 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.