Semiconductor device and its manufacturing method
US7518247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2003 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Dec 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.