Transponder device
US7518512B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 1, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Sep 23, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06K19/0723
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A transponder device comprises an integrated CMOS circuit with a semiconductor substrate. A first rectifying diode (DS) is formed by the substrate diode of the CMOS circuit. A first MOS transistor structure (DR1) and a second MOS transistor structure (DR2) have their channels connected in series such that they function as a second rectifying diode, the cathode of the first rectifying diode being connected to the anode of the second rectifying diode. The first MOS transistor structure (DR1) and the second MOS transistor structure (DR2) are spaced from each other such that a distance between the two MOS transistor structures is large enough that a parasitic npn-structure formed within the substrate by the first and the second MOS structures has a negligible current gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.