Single crystal scintillator materials and methods for making the same
US7520931B2 · kind B2 · utility
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4References
22Claims
0Family size
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Key dates
| Filing date | Aug 23, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Feb 3, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.