Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device
US7521263B2 · kind B2 · utility
2Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Nov 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an insulating film includes forming a base film comprising a material whose surface is oxidized by being exposed to an oxidant. A source gas containing a metal material and a first oxidant having a first oxidation force are alternately supplied to form a first insulating film on the base film. A source gas containing a metal material and a second oxidant having a second oxidation force stronger than the first oxidation force are alternately supplied to form a second insulating film on the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.