Methods for forming capacitor structures
US7521330B2 · kind B2 · utility
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15References
20Claims
0Family size
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Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jun 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.