Optoelectronic detector with multiple readout nodes and its use thereof
US7521663B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 18, 2003 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Dec 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.