Semiconductor device having GaN-based semiconductor layer

US7521707B2 · kind B2 · utility

Assignee

• Eudyna Devices Inc. · JP

Inventors

• Takeshi Kawasaki · Kawasaki, JP
• Ken Nakata · Yokohama, JP
• Hiroshi Yano · Tokyo, JP

Key dates

• Filing date: Mar 22, 2006
• Grant date: Apr 21, 2009
• Expiry date: Jan 15, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.