Thin film semiconductor device
US7521712B2 · kind B2 · utility
3Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2007 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Mar 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
Abstract
A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.