Light emitting diode package and process of making the same
US7521724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jun 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
Abstract
A light emitting diode (LED) package and process of making the same includes a silicon-on-insulator (SOI) substrate that is composed of two silicon based materials and an insulation layer interposed therebetween. The two silicon based materials of silicon-on-insulator substrate are etched to form a reflective cavity and an insulation trench, respectively, for dividing the silicon-on-insulator substrate into contact surfaces of positive and negative electrodes. A plurality of metal lines are then formed to electrically connect the two silicon based materials such that the LED chip can be mounted on the reflective cavity and electrically connected to the corresponding electrodes of the silicon-on-insulator substrate by the metal lines. Thus the properties of heat resistance and heat dispersal can be improved and the process can be simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.