Semiconductor diode and method for the production thereof

US7521774B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Richard Spitz · Reutlingen, DE
• Alfred Goerlach · Tübingen, DE
• Dana Keppeler · Markdorf, DE

Key dates

• Filing date: Jun 3, 2003
• Grant date: Apr 21, 2009
• Expiry date: Aug 10, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/00

Abstract

In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a comparatively narrow edge region of the cross-sectional area. The semiconductor system is characterized by a low bulk resistance and a high breakdown voltage in the edge region. In addition, a method for manufacturing this semiconductor system is specified.