Patent · US Active

Boundary acoustic wave device and method for manufacturing boundary acoustic wave device

US7522020B2 · kind B2 · utility

6Cited by
5References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 7, 2008
Grant dateApr 21, 2009
Priority date
Expiry dateJan 7, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H9/02228
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A boundary acoustic wave device has a small thickness, which is suitable for thin apparatuses, and can be manufactured at low cost. The boundary acoustic wave device includes a first IDT electrode disposed on a first surface of a substrate, a first insulating film covering the first IDT electrode, a second IDT electrode disposed on a second surface of the substrate, and a second insulating film covering the second IDT electrode. Either the substrate or the first and second insulating films have piezoelectric characteristics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.