Patent · US Active

Degeneration technique for designing memory devices

US7523420B2 · kind B2 · utility

0Cited by
6References
9Claims
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Key dates

Filing dateAug 18, 2006
Grant dateApr 21, 2009
Priority date
Expiry dateApr 18, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A system, method and computer program product are provided for producing an instance of a memory device from a banked memory architecture. The banked memory architecture specifies a maximum number of memory banks and a maximum number of rows per memory bank. The method comprises the step of receiving input parameters indicating a number of properties of the memory device, the properties comprising at least a number of rows R for the memory device. Thereafter, a degeneration process is performed on the banked memory architecture in order to produce the instance of a memory device having those properties. The degeneration process comprises the steps of: (i) selecting a number of memory banks B for the instance, where the number is an integer less than or equal to the maximum number of memory banks specified by the banked memory architecture, and B is not constrained to be a factor of R; and (ii) partitioning the number of rows R amongst the selected memory banks such that in each memory bank the number of rows in that memory bank is an integer less than or equal to the maximum number of rows per memory bank specified by the banked memory architecture. This has been found to provide a…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.