Growth of uniform crystals
US7524375B1 · kind B1 · utility
0Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2004 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Apr 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a molten state and electromagnetically stirring the melt using magnetic and electric fields to obtain a more uniform composition of melt and slowly reducing the temperature of the melt over the crystal to grow a more uniform crystal from such stirred melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.