Fluid ejection device structures and methods therefor
US7524430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2004 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Jan 18, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1631
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.