Method for producing a radiation-emitting-and-receiving semiconductor chip

US7524687B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Glenn-Yves Plaine · Regensburg, DE
• Tony Albrecht · Bad Abbach, DE
• Peter Brick · Regensburg, DE
• Marc Philippens · Regensburg, DE

Key dates

• Filing date: Feb 26, 2008
• Grant date: Apr 28, 2009
• Expiry date: Feb 26, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F55/255

Abstract

A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.