Semiconductor device and method for manufacturing same
US7524723B2 · kind B2 · utility
4Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Mar 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.