Method of forming titanium nitride layer and method of fabricating capacitor using the same
US7524724B2 · kind B2 · utility
2Cited by
19References
39Claims
0Family size
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Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.