Anti-reflective substrate and the manufacturing method thereof
US7524773B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Oct 17, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is to provide an anti-reflective substrate, and the manufacturing method of the substrate. The method comprises the steps of: (a) providing a substrate; (b) depositing an amorphous silicon layer on the substrate; and (c) etching the amorphous silicon layer and the substrate by chemical etching in solutions, and the amorphous silicon layer is removed by the solutions. The effective reflectance of the anti-reflective substrate produced from the method of the present invention can be lower than 1%, and the absorption rate of the anti-reflective substrate is preferably from 70% to 90% in a wavelength range of 300 nm-900 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.