Patent · US Expired

Radiation detector with an epitaxially grown semiconductor body

US7525083B2 · kind B2 · utility

6Cited by

5References

27Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Arndt Jaeger · Regensburg, DE
Peter Stauß · Nittendorf, DE

Key dates

Filing date	Sep 29, 2005
Grant date	Apr 28, 2009
Priority date	—
Expiry date	Sep 29, 2025

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/544
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.