Semiconductor device and display device
US7525135B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 2005 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a poly-silicon layer formed on a glass substrate, a gate electrode is formed via a gate insulation film. After forming an impurity-doped region in the poly-silicon layer using the gate electrode as a mask, an insulation layer is formed on the gate electrode and an insulation film is then formed covering these. At this stage, a step which is low in a periphery of the gate electrode but high in a center of the gate electrode is formed in the surface of the insulation layer which formed on the gate electrode, ensuring that the insulation layer and the insulation film on the center of the gate electrode attain a higher reflectance of laser beam than the insulation film and the gate insulation layer on the impurity-doped region do.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.