Active pixel sensor with reduced fixed pattern noise using two active regions
US7525582B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jan 31, 2005 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Oct 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1865
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes pixels each of which is designed to transfer charge, accumulated in a photoactive region of the pixel during a first period, through a second active region of the pixel to a power supply node, and to transfer charge, accumulated in the photoactive region during a second period, through the second active region to a sense node in the pixel. Passing charge through the second active region prior to transferring it either to the power supply node or the sense node can help reduce fixed pattern noise. The image sensor can be operated in snap-shot mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.