Patent · US Active

Memory array with pseudo single bit memory cell and method

US7525840B2 · kind B2 · utility

4Cited by
13References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 7, 2007
Grant dateApr 28, 2009
Priority date
Expiry dateAug 7, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5641
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In the multi level/bit per cell memory array, a flag cell indicates pseudo single bit per cell configuration for one or more cells of the memory array. The output of the cell or cells associated with the flag cell is a single bit when the flag cell is set. The cell or cells associated with the flag cell operate as multi level/bit per cell cells when the flag cell is not set. The flag cell of the memory array may also be a multi level/bit per cell cell that is read to provide a single bit output. Multiple flag cells may be provided and associated with various cells or groups of cells so that these cells or groups of cells may be operated in a user selectable pseudo single bit configuration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.