Buried lateral index guided lasers and lasers with lateral current blocking layers

US7526007B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Christopher L. Chua · San Jose, US
• Michael A. Kneissl · Berlin, DE
• Noble M. Johnson · Menlo Park, US
• Peter Kiesel · Palo Alto, US

Key dates

• Filing date: Dec 15, 2005
• Grant date: Apr 28, 2009
• Expiry date: Dec 26, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.