Optical semiconductor device
US7526170B2 · kind B2 · utility
26Cited by
4References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical waveguide device is disclosed which includes a semiconductor region, an optical waveguide provided between a first light confinement layer and a second light confinement layer formed in the semiconductor region, and at least one insulating film region formed in the semiconductor region and above at least one of an outside and an inside with respect to a curvature radius direction of the bent portion of the optical waveguide, wherein; the insulating film region is also used as an isolation region of a MOS device to be formed in the semiconductor region in which the insulating film region is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.