Pattern forming method and method for manufacturing a semiconductor device
US7527918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2004 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Mar 7, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.