Method of treating and removing a photoresist pattern and method of manufacturing a semiconductor device using the same
US7527921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | May 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example embodiments of the present invention relate to methods of treating and removing a photoresist pattern and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of treating a photoresist pattern and a method of removing a photoresist pattern formed using a photoresist composition suitable for argon fluoride (ArF). In a method of removing a photoresist pattern, an ozone vapor including a water vapor and an ozone gas may be provided onto the photoresist pattern to remove a hydrophobic group from a photoresist resin included in the photoresist pattern. A cleaning solution may be provided to make the photoresist pattern water-soluble. A cleaning process may be performed on the photoresist pattern to remove the photoresist pattern. The photoresist pattern may be effectively removed without an increased processing time and/or damage to a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.