MEMS structure with anodically bonded silicon-on-insulator substrate
US7527997B2 · kind B2 · utility
5Cited by
11References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 8, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Mar 12, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/031
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass substrate is anodically bonded to the other side of the SOI substrate, and debonding of the existing anodic bond prevented by eliminating any potential drop across the existing bonded surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.