Vertical structure LED and fabricating method thereof
US7528416B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jun 29, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Nov 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of electrolytic plating method in which no high temperature process is required to obviate occurrence of defects on the devices, and the metal support layer containing a soft metal and a hard metal is formed on the light emitting structure to prevent occurrence of warping of a wafer to increase the mechanical strength and to improve reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.