Semiconductor device and manufacturing method thereof
US7528442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Aug 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.