Thin film transistor comprising novel conductor and dielectric compositions

US7528448B2 · kind B2 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Richard Kevin Bailey · Newark, US
• Graciela Beatriz Blanchet · Boston, US
• John Catron · Smyrna, US
• Reid John Chesterfield · Lompoc, US
• Howard David Glicksman · Durham, US
• Marc B. Goldfinger · West Chester, US
• Gary Delmar Jaycox · West Chester, US
• Lynda Kaye Johnson · Wilmington, US
• Roupen Leon Keusseyan · Raleigh, US
• Irina Malajovich · Swarthmore, US
• Hong Meng · Lo Wu, CN
• Jeffrey Scott Meth · Landenberg, US
• Geoffrey Nunes · Swarthmore, US
• Gerard O'Neil · Newark, US
• Kenneth George Sharp · Landenberg, US
• Feng Gao · Beijing, CN

Key dates

• Filing date: Jul 17, 2006
• Grant date: May 5, 2009
• Expiry date: Sep 20, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/655

Abstract

The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.