Aluminum nitride single-crystal multi-layered substrate
US7528462B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Feb 6, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Feb 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.