Chemical mechanical polishing pad with controlled wetting
US7530887B2 · kind B2 · utility
18Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2007 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Aug 16, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B7/228
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R, is between 0.01 and 0.75. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.