Heat sink made from diamond-copper composite material containing boron, and method of producing a heat sink
US7531020B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Oct 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat sink that is particularly suitable for semiconductor components is made from a diamond-containing composite material. In addition to a diamond fraction amounting to 40-90% by volume, the composite material also contains 7 to 59% by volume copper or a copper-rich phase (with Cu>80 at. %) and 0.01 to 20% by volume boron or a boron-rich phase (with B>50 at. %). The bonding of copper to the diamond grains can be considerably improved by the addition of boron, with the result that a high thermal conductivity can be achieved. The heat sink component is preferably produced with an unpressurized and pressure-assisted infiltration technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.