Method of removing residue from a substrate after a DRIE process
US7531047B1 · kind B1 · utility
5Cited by
5References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 12, 2007 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Dec 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
The present disclosure provides a method of cleaning a semiconductor substrate after a DRIE etch process, wherein residue from the DRIE process is removed without damaging the substrate. The process may include contacting the micro-fluid ejection head with an aqueous solution of TMAH, stripping a photoresist etch mask from the micro-fluid ejection head, and dissolving a passivating coating from the substrate. Then the substrate may be contacted with an acidic solution. The method may further include rinsing and drying the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.