Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning

US7531102B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Qiquan Geng · San Jose, US
• Jeff J. Xu · Zhubeikou, TW
• Everett Lee · Los Altos, US
• Michael Tzu Ru · San Mateo, US
• Hsu-en Yang · San Jose, US
• Chung-Yuen Hui · Ithaca, US

Key dates

• Filing date: Mar 31, 2006
• Grant date: May 12, 2009
• Expiry date: Jun 6, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.