Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium
US7531103B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2004 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Nov 18, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A mask forming method forms an A mask forming functional layer with an amorphous structure so as to cover an etched body, forms a B mask forming functional layer so as to cover the formed A mask forming functional layer, forms a convex/concave pattern in the formed B mask forming functional layer by carrying out a predetermined process to form a B mask on the A mask forming functional layer, and forms an A mask on the etched body by forming a convex/concave pattern in the A mask forming functional layer by dry etching the A mask forming functional layer using the B mask. By doing so, a convex/concave pattern with extremely small pattern fluctuations can be formed in the A mask forming functional layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.