Patent · US Expired

Two-layer shadow mask with small dimension apertures and method of making and using same

US7531216B2 · kind B2 · utility

10Cited by
5References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 28, 2004
Grant dateMay 12, 2009
Priority date
Expiry dateJul 28, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K71/166
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention is a two-layer shadow mask with small dimension apertures and method of making and using same. The two-layer shadow mask of the present invention is suitable for use for manufacturing an electronic device via deposition in a production system. The two-layer shadow mask of the present invention is formed by a first thick mask, which includes a plurality of apertures that has been formed, for example, by etching, bonded to a second, comparatively thin mask, that has been formed by an electrolytic process, and which includes a plurality of apertures that has been patterned by a photoresist. The second mask is aligned and bonded atop the first mask, with their respective apertures desirably offset one to another. The offset amount of the respective apertures of the two-layer shadow mask determines the resulting final aperture dimension, which may approach 0 microns, through which material is deposited upon a substrate in a deposition production system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.