Patent · US Expired

Method of manufacturing a dielectric layer and corresponding semiconductor device

US7531405B2 · kind B2 · utility

6Cited by

8References

6Claims

0Family size

Assignee

Qimonds AG · DE

Inventors

Andreas Spitzer · Ottobrunn, DE
Elke Erben · Dresden, DE

Key dates

Filing date	Feb 28, 2005
Grant date	May 12, 2009
Priority date	—
Expiry date	Apr 22, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/716
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.