Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon
US7531464B2 · kind B2 · utility
3Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Jul 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. The chlorohydrocarbon is heated in a first chamber 210 to a first temperature that substantially disassociates the chlorohydrocarbon. The substantially disassociated chlorohydrocarbon is used to form a film on a semiconductive substrate [235] that is located in a second chamber [215].
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.