Increased mobility from organic semiconducting polymers field-effect transistors

US7531835B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Alan J. Heeger · Lompoc, US
• Daniel Moses · San Diego, US
• Guangming Wang · Lompoc, US
• James S. Swensen · Paul, US

Key dates

• Filing date: Nov 21, 2005
• Grant date: May 12, 2009
• Expiry date: Jan 11, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/12

Abstract

Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.