Semiconductor device and manufacturing method of the same
US7531853B2 · kind B2 · utility
6Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2007 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | May 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a <100> direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.