Voltage generating circuit and semiconductor memory device having the same
US7532534B2 · kind B2 · utility
1Cited by
19References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Apr 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4076
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a voltage generating circuit and a semiconductor memory device having the same. The voltage generating circuit includes an internal voltage generating portion for generating an internal voltage in response to a signal input from an external portion; a sensing portion for outputting a sensing signal when the signal input from the external portion is input again within a predetermined time period; a control signal generating portion for outputting a control signal in response to the sensing signal; and a compensating portion for compensating the internal voltage in response to the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.