Patent · US Active

Method of error correction in a multi-bit-per-cell flash memory

US7533328B2 · kind B2 · utility

119Cited by

7References

42Claims

0Family size

Assignee

SANDISK IL LTD. · IL

Inventors

Idan Alrod · Herzliya, IL
Eran Sharon · Rishon LeZion, IL
Simon Litsyn · Givat Shmuel, IL

Key dates

Filing date	Dec 4, 2006
Grant date	May 12, 2009
Priority date	—
Expiry date	Apr 18, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Data are encoded as a systematic or nonsystematic codeword that is stored in a memory such as a flash memory. A representation of the codeword is read from the memory. A plurality of bits related to the representation of the codeword is decoded iteratively. The plurality of bits could be, for example, part or all of the representation of the codeword itself or part or all of the results of preliminary processing of part or all of the representation of the codeword.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.