Method of manufacturing semiconductor device
US7534717B2 · kind B2 · utility
0Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2005 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.