Modification of semiconductor surfaces in a liquid
US7534729B2 · kind B2 · utility
0Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Dec 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states include reduction or elimination of an electrically active state of the surface, wherein, at the atomic level, the surface binding characteristics are changed. Passivation includes the termination of dangling bonds on the surface of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.