Structure and manufacturing method for a silicon carbide semiconductor device
US7535025B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Jan 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.